IXTN5N250

new-10%

Manufacturer part number:IXTN5N250

Manufacturer:IXYS

Description:MOSFET N-CH 2500V 5A SOT227B

Case Package:SOT-23

Datasheet:IXTN5N250 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	700W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.8 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	8560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	2500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	44 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	2.5kV
Pulsed Drain Current-Max (IDM)	20A
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	ROHS3 Compliant