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IXTP30N25L2

  • IXTP30N25L2
  • IXTP30N25L2

IXTP30N25L2

IXTP30N25L2

IXYS

DISC MOSFET N-CH LINEAR L2 TO-22

SOT-23

IXTP30N25L2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 355W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.44000 $13.44
500 $13.3056 $6652.8
1000 $13.1712 $13171.2
1500 $13.0368 $19555.2
2000 $12.9024 $25804.8
2500 $12.768 $31920

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