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STF13NM60N

STF13NM60N

STF13NM60N

STMicroelectronics

STF13NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STF13NM60N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier TO-220FP-7012510
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 280mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF13
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection ISOLATED
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 5.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 200 mJ
Max Junction Temperature (Tj) 150°C
Nominal Vgs 3 V
Height 20mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.88000 $3.88
50 $3.11860 $155.93
100 $2.84130 $284.13
500 $2.30076 $1150.38
1,000 $1.94040 $1.9404
2,500 $1.84338 $3.68676
5,000 $1.77408 $8.8704
STF13NM60N Product Details

STF13NM60N Description


These devices STF13NM60N are N-channel power MOSFET developed using the second generation MDesh technology. These revolutionary power MOSFET combine vertical structure with the company's stripe layout, resulting in one of the lowest on-resistance and gate charges in the world. Therefore, they are suitable for the most demanding high-efficiency converters.

 

STF13NM60N Features

 

? 100% avalanche tested

? Low input capacitance and gate charge

? Low gate input resistance

 

STF13NM60N Applications


? Switching applications


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