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IXTP64N10L2

IXTP64N10L2

IXTP64N10L2

IXYS

DISC MOSFET N-CH LINEAR L2 TO-22

SOT-23

IXTP64N10L2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 357W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.21000 $18.21
500 $18.0279 $9013.95
1000 $17.8458 $17845.8
1500 $17.6637 $26495.55
2000 $17.4816 $34963.2
2500 $17.2995 $43248.75

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