IXTP6N50P

new-10%

Manufacturer part number:IXTP6N50P

Manufacturer:IXYS

Description:MOSFET N-CH 500V 6A TO-220

Case Package:SOT-23

Datasheet:IXTP6N50P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	6A
Power Dissipation-Max	100W Tc
Element Configuration	Single
Power Dissipation	100W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	14.6nC @ 10V
Rise Time	28ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	740pF
Drain to Source Resistance	1.1Ohm
Rds On Max	1.1 Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free