MTD5P06VT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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MTD5P06VT4G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
340MOhm
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
2.1W Ta 40W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
40W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
510pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
26ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±15V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
2.8V
Gate to Source Voltage (Vgs)
15V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
-60V
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MTD5P06VT4G Product Details
MTD5P06VT4G Description
High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls.
MTD5P06VT4G Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature