IXTQ110N055P

new-10%

Manufacturer part number:IXTQ110N055P

Manufacturer:IXYS

Description:MOSFET N-CH 55V 110A TO-3P

Case Package:SOT-23

Datasheet:IXTQ110N055P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	PolarHT™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	390W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13.5m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	76nC @ 10V
Rise Time	53ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	66 ns
Continuous Drain Current (ID)	110A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	250A
Avalanche Energy Rating (Eas)	1000 mJ
Height	20.3mm
Length	15.8mm
Width	4.9mm
RoHS Status	ROHS3 Compliant