APT75F50L

new-10%

Manufacturer part number:APT75F50L

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 75A TO-264

Case Package:SOT-23

Datasheet:APT75F50L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 8™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE MATTE TIN
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1040W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.04kW
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 37A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	11600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	290nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	39 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.075Ohm
Pulsed Drain Current-Max (IDM)	230A
DS Breakdown Voltage-Min	500V
Radiation Hardening	No
RoHS Status	RoHS Compliant