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IXTR68P20T

IXTR68P20T

IXTR68P20T

IXYS

DISCMSFT PCHAN-TRENCH GATE ISOPL

SOT-23

IXTR68P20T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 1 Weeks
Mounting Type Through Hole
Package / Case ISOPLUS247™
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2012
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 270W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 64m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 33400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 44A
Drain-source On Resistance-Max 0.064Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 2500 mJ
RoHS Status RoHS Compliant

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