IXTR90P10P

new-10%

Manufacturer part number:IXTR90P10P

Manufacturer:IXYS

Description:MOSFET P-CH 100V 57A ISOPLUS247

Case Package:SOT-23

Datasheet:IXTR90P10P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	PolarP™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	190W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	57A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	57A
Drain-source On Resistance-Max	0.027Ohm
Pulsed Drain Current-Max (IDM)	225A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	ROHS3 Compliant