2SK1339-E

new-10%

Manufacturer part number:2SK1339-E

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 900V 3A TO-3P

Case Package:SOT-23

Datasheet:2SK1339-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	80W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7 Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Rise Time	40ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	7Ohm
Pulsed Drain Current-Max (IDM)	7A
DS Breakdown Voltage-Min	900V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant