IXTT10N100D2

new-10%

Manufacturer part number:IXTT10N100D2

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 10A TO-267

Case Package:SOT-23

Datasheet:IXTT10N100D2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	695W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds	5320pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 5V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	10A
DS Breakdown Voltage-Min	1000V
FET Feature	Depletion Mode
RoHS Status	ROHS3 Compliant