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STP13N65M2

STP13N65M2

STP13N65M2

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 430m Ω @ 5A, 10V ±25V 590pF @ 100V 17nC @ 10V 650V TO-220-3

SOT-23

STP13N65M2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ M2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP13N
Power Dissipation-Max 110W Tc
Element Configuration Single
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 430m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 25V
Height 15.75mm
Length 10.4mm
Width 4.6mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.96000 $1.96
50 $1.58400 $79.2
100 $1.42560 $142.56
500 $1.10880 $554.4
1,000 $0.91872 $0.91872
2,500 $0.85536 $1.71072
5,000 $0.82368 $4.1184
STP13N65M2 Product Details

STP13N65M2 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 590pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STP13N65M2 Features


a continuous drain current (ID) of 10A
the turn-off delay time is 38 ns
a 650V drain to source voltage (Vdss)


STP13N65M2 Applications


There are a lot of STMicroelectronics
STP13N65M2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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