SI3443DDV-T1-GE3

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Manufacturer part number:SI3443DDV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CHAN 20V TSOP6S

Case Package:SOT-23

Datasheet:SI3443DDV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.7W Ta 2.7W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	27 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	47m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	970pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A Ta 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 8V
Rise Time	25ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	-4A
JEDEC-95 Code	MO-193AA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.047Ohm
DS Breakdown Voltage-Min	20V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free