IXTT30N60P

new-10%

Manufacturer part number:IXTT30N60P

Manufacturer:IXYS

Description:Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXTT30N60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	540W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	540W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.24Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free