FQPF27N25

new-10%

Manufacturer part number:FQPF27N25

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 110m Ω @ 7A, 10V ±30V 2450pF @ 25V 65nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:FQPF27N25 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Factory Lead Time	9 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	250V
Technology	MOSFET (Metal Oxide)
Current Rating	14A
Number of Elements	1
Power Dissipation-Max	55W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	55W
Case Connection	ISOLATED
Turn On Delay Time	32 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	270ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	56A
Avalanche Energy Rating (Eas)	600 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free