IXTU1R4N60P

new-10%

Manufacturer part number:IXTU1R4N60P

Manufacturer:IXYS

Description:MOSFET N-CH 600V 1.4A TO251

Case Package:SOT-23

Datasheet:IXTU1R4N60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.4A Tc
Gate Charge (Qg) (Max) @ Vgs	5.2nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	1.4A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	9Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	2.1A
Avalanche Energy Rating (Eas)	75 mJ
RoHS Status	RoHS Compliant