FDW256P  Description

  This P-channel MOSFET is a rugged gate version of Xiantong Semiconductor's advanced power trench process. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).

FDW256P    Applications

· Battery protection

· DC/DC conversion

· Power management

· Load switch

FDW256P     Features

· –8 A, –30 V RDS(ON) = 13.5 mW @ VGS = –10 V

 RDS(ON) = 20 mW @ VGS = –4.5 V

· Extended VGSS range (±25V) for battery applications

· High performance trench technology for extremely

low RDS(ON)

· Low profile TSSOP-8 package