NVTFS5820NLTAG

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NVTFS5820NLTAG

Manufacturer part number:NVTFS5820NLTAG

Manufacturer:ON Semiconductor

Description:NVTFS5820NLTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NVTFS5820NLTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 15 hours ago)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Power Dissipation-Max	3.2W Ta 21W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	21W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11.5m Ω @ 8.7A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1462pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	2.3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	29A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	247A
Height	750μm
Length	3.15mm
Width	3.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free