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IXTV02N250S

IXTV02N250S

IXTV02N250S

IXYS

Trans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) PLUS220 SMD

SOT-23

IXTV02N250S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PLUS-220SMD
Number of Pins 220
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 57mW
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 450 Ω @ 50mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 116pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V
Drain to Source Voltage (Vdss) 2500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 2.5kV
Pulsed Drain Current-Max (IDM) 0.5A
RoHS Status RoHS Compliant
Lead Free Lead Free

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