IXTX550N055T2

new-10%

Manufacturer part number:IXTX550N055T2

Manufacturer:IXYS

Description:Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET

Case Package:SOT-23

Datasheet:IXTX550N055T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	FRFET®, SupreMOS®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Output Voltage	55V
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1250W Tc
Nominal Supply Current	200A
Operating Mode	ENHANCEMENT MODE
Output Current	550A
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	550A Tc
Gate Charge (Qg) (Max) @ Vgs	595nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	230 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	550A
Avalanche Energy Rating (Eas)	3000 mJ
Number of Drivers	1
RoHS Status	ROHS3 Compliant