STW11NK100Z

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STW11NK100Z

Manufacturer part number:STW11NK100Z

Manufacturer:STMicroelectronics

Description:STW11NK100Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW11NK100Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	9.071847g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.38Ohm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Current Rating	8.3A
Base Part Number	STW11N
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	230W
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.38 Ω @ 4.15A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.3A Tc
Gate Charge (Qg) (Max) @ Vgs	162nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	98 ns
Continuous Drain Current (ID)	8.3A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	1kV
Avalanche Energy Rating (Eas)	550 mJ
Max Junction Temperature (Tj)	150°C
Height	24.45mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free