NTD4865N-1G

new-10%

Manufacturer part number:NTD4865N-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 8.5A IPAK

Case Package:SOT-23

Datasheet:NTD4865N-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.27W Ta 33.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.92W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	827pF @ 12V
Current - Continuous Drain (Id) @ 25°C	8.5A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs	10.8nC @ 4.5V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	17.4 ns
Continuous Drain Current (ID)	44A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8.5A
Drain-source On Resistance-Max	0.0109Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	87A
Avalanche Energy Rating (Eas)	50 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free