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FDD6512A

  • FDD6512A
  • FDD6512A

FDD6512A

FDD6512A

ON Semiconductor

FDD6512A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD6512A Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-PAK (TO-252)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 43W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 21mOhm @ 10.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1082pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10.7A Ta 36A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.41000 $0.41
500 $0.4059 $202.95
1000 $0.4018 $401.8
1500 $0.3977 $596.55
2000 $0.3936 $787.2
2500 $0.3895 $973.75
FDD6512A Product Details

FDD6512A Description


FDD6512A is a 20v N-Channel PowerTrench MOSFET. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and extremely low Ros(on in a small package.



FDD6512A Features


                      RDS(on) = [email protected] VGS = 2.5 V

  • Low gate charge (12 nC typical)

  • Fast switching

  • High performance trench technology for extremely low RDS(on)

  • Gate-Source Voltage: ± 12V



FDD6512A Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Motor drive


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