IXTY08N50D2

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Manufacturer part number:IXTY08N50D2

Manufacturer:IXYS

Description:IXTY08N50D2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from IXYS stock available on our website

Case Package:SOT-23

Datasheet:IXTY08N50D2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	60W Tc
Power Dissipation	60W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	4.6 Ω @ 400mA, 0V
Input Capacitance (Ciss) (Max) @ Vds	312pF @ 25V
Current - Continuous Drain (Id) @ 25°C	800mA Tc
Gate Charge (Qg) (Max) @ Vgs	12.7nC @ 5V
Drain to Source Voltage (Vdss)	500V
Vgs (Max)	±20V
Continuous Drain Current (ID)	800mA
FET Feature	Depletion Mode
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free