IXTY1N80P

new-10%

Manufacturer part number:IXTY1N80P

Manufacturer:IXYS

Description:MOSFET N-CH 800V 1A TO-252

Case Package:SOT-23

Datasheet:IXTY1N80P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	Polar™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Pure Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1A
Pulsed Drain Current-Max (IDM)	2A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	75 mJ
RoHS Status	ROHS3 Compliant