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IXTY1R4N120P

IXTY1R4N120P

IXTY1R4N120P

IXYS

MOSFET N-CH 1200V 1.4A TO-252

SOT-23

IXTY1R4N120P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.4A
Power Dissipation-Max (Abs) 86W
RoHS StatusROHS3 Compliant
In-Stock:2146 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.436062$3.436062
10$3.241568$32.41568
100$3.058083$305.8083
500$2.884983$1442.4915
1000$2.721682$2721.682

About IXTY1R4N120P

The IXTY1R4N120P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 1200V 1.4A TO-252.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTY1R4N120P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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