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IXTY1R4N120P

IXTY1R4N120P

IXTY1R4N120P

IXYS

MOSFET N-CH 1200V 1.4A TO-252

SOT-23

IXTY1R4N120P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.4A
Power Dissipation-Max (Abs) 86W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.436062 $3.436062
10 $3.241568 $32.41568
100 $3.058083 $305.8083
500 $2.884983 $1442.4915
1000 $2.721682 $2721.682

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