IXTY1R4N120PHV

new-10%

Manufacturer part number:IXTY1R4N120PHV

Manufacturer:IXYS

Description:MOSFET N-CH

Case Package:SOT-23

Datasheet:IXTY1R4N120PHV Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	Polar™
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	86W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	666pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.4A Tc
Gate Charge (Qg) (Max) @ Vgs	24.8nC @ 10V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V