SI4840BDY-T1-E3

new-10%

Manufacturer part number:SI4840BDY-T1-E3

Manufacturer:Vishay Siliconix

Description:Transistor Mosfet N-ch 40V 12.4A 8-PIN SOIC N T/r

Case Package:SOT-23

Datasheet:SI4840BDY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	9MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	1
Voltage	40V
Power Dissipation-Max	2.5W Ta 6W Tc
Element Configuration	Single
Current	19A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 12.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 20V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	19A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Max Junction Temperature (Tj)	150°C
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free