IPI032N06N3GAKSA1

new-10%

Manufacturer part number:IPI032N06N3GAKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:IPI032N06N3GAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	188W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	188W
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 118μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 30V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
Rise Time	120ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	480A
Height	11.177mm
Length	10.36mm
Width	4.572mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead