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IRFPS40N50LPBF

IRFPS40N50LPBF

IRFPS40N50LPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 100mOhm @ 28A, 10V ±30V 8110pF @ 25V 380nC @ 10V 500V TO-274AA

SOT-23

IRFPS40N50LPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Supplier Device Package SUPER-247™ (TO-274AA)
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 87mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 46A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 540W Tc
Element Configuration Single
Power Dissipation 450W
Turn On Delay Time 27 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time 170ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 46A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 8.11nF
Drain to Source Resistance 100mOhm
Rds On Max 100 mΩ
Height 20.8mm
Length 16.1mm
Width 5.3mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.837004 $10.837004
10 $10.223588 $102.23588
100 $9.644895 $964.4895
500 $9.098957 $4549.4785
1000 $8.583921 $8583.921
IRFPS40N50LPBF Product Details

IRFPS40N50LPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8110pF @ 25V.This device conducts a continuous drain current (ID) of 46A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 100mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 27 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFPS40N50LPBF Features


a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 100mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IRFPS40N50LPBF Applications


There are a lot of Vishay Siliconix
IRFPS40N50LPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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