SUD50N10-18P-GE3

new-10%

Manufacturer part number:SUD50N10-18P-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 8.2A DPAK

Case Package:SOT-23

Datasheet:SUD50N10-18P-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3W Ta 136.4W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	8.2A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.8A
Drain to Source Breakdown Voltage	100V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant