HGTP3N60A4                      Description

The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MosFEis and bipolartransstors.hese devices havethe high input impedance of a MOsFETand the lowon-state conduction loss of a bipolar transistor.The much lower on- state voltage drop varies only moderately between 25°C and150℃.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.This device has been optimized for high frequency switch mode power supplies.  

HGTP3N60A4                Features

·>100kHz Operation at 390V.3A·200kHz Operation at 390V2.5A

·600V Switching SOA Capability

Typical Fall Time....70nsatT=125℃

·12mJ EAs Capability

·Low Conduction Loss.Related Literature

.TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards"         

HGTP3N60A4                APPLICATIONS

Low Jitter Clock Driver for High-End Datacom Applications Including SONETEthernetFibre Channel, Serial ATAand HDTV

Cost-Effective High-Frequency Crystal Oscillator Replacement