IXXK200N65B4

new-10%

Manufacturer part number:IXXK200N65B4

Manufacturer:IXYS

Description:IGBT 650V 370A 1150W TO264

Case Package:SOT-23

Datasheet:IXXK200N65B4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2014
Series	GenX4™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.15kW
Reach Compliance Code	unknown
Element Configuration	Single
Power Dissipation	1.15kW
Input Type	Standard
Power - Max	1150W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7V
Max Collector Current	370A
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.4V
Test Condition	400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 160A
IGBT Type	PT
Gate Charge	553nC
Current - Collector Pulsed (Icm)	1000A
Td (on/off) @ 25°C	62ns/245ns
Switching Energy	4.4mJ (on), 2.2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant