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APT80GA60LD40

APT80GA60LD40

APT80GA60LD40

Microsemi Corporation

Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264

SOT-23

APT80GA60LD40 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 33 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 10.6g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 8™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 625W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 143A
Reverse Recovery Time 22 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 52 ns
Test Condition 400V, 47A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 47A
Continuous Collector Current 143A
Turn Off Time-Nom (toff) 326 ns
IGBT Type PT
Gate Charge 230nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 23ns/158ns
Switching Energy 840μJ (on), 751μJ (off)
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.44000 $14.44
10 $13.13000 $131.3
25 $12.14560 $303.64
100 $11.16090 $1116.09
250 $10.17612 $2544.03
500 $9.51958 $4759.79
1,000 $8.75364 $8.75364

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