APT80GA60LD40

new-10%

Manufacturer part number:APT80GA60LD40

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-264

Case Package:SOT-23

Datasheet:APT80GA60LD40 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	33 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Max Power Dissipation	625W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	143A
Reverse Recovery Time	22 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Turn On Time	52 ns
Test Condition	400V, 47A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 47A
Continuous Collector Current	143A
Turn Off Time-Nom (toff)	326 ns
IGBT Type	PT
Gate Charge	230nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	23ns/158ns
Switching Energy	840μJ (on), 751μJ (off)
Height	5.21mm
Length	26.49mm
Width	20.5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant