IXBH42N170

new-10%

Manufacturer part number:IXBH42N170

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.7KV 80A 3-Pin(3+Tab) TO-247AD

Case Package:SOT-23

Datasheet:IXBH42N170 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2008
Series	BIMOSFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.7kV
Max Power Dissipation	360W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	75A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXB*42N170
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	360W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	45 ns
Transistor Application	POWER CONTROL
Rise Time	35ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	365 ns
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	80A
Reverse Recovery Time	1.32μs
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Turn On Time	224 ns
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 42A
Turn Off Time-Nom (toff)	1070 ns
Gate Charge	188nC
Current - Collector Pulsed (Icm)	300A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Height	21.46mm
Length	16.26mm
Width	5.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free