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IXXX200N60B3

  • IXXX200N60B3
  • IXXX200N60B3

IXXX200N60B3

IXXX200N60B3

IXYS

IGBT

SOT-23

IXXX200N60B3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series XPT™, GenX3™
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 1630W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 100ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 380A
Power Dissipation-Max (Abs) 1630W
Turn On Time 140 ns
Test Condition 360V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 100A
Turn Off Time-Nom (toff) 395 ns
Gate Charge 315nC
Current - Collector Pulsed (Icm) 900A
Td (on/off) @ 25°C 48ns/160ns
Switching Energy 2.85mJ (on), 4.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $17.09400 $512.82

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