RJH1CV7DPQ-E0#T2

new-10%

Manufacturer part number:RJH1CV7DPQ-E0#T2

Manufacturer:Renesas Electronics America

Description:Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-247 Tube

Case Package:SOT-23

Datasheet:RJH1CV7DPQ-E0#T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	320W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	320W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	70A
Reverse Recovery Time	200 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	98 ns
Test Condition	600V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 35A
Turn Off Time-Nom (toff)	465 ns
IGBT Type	Trench
Gate Charge	166nC
Td (on/off) @ 25°C	53ns/185ns
Switching Energy	3.2mJ (on), 2.5mJ (off)
Gate-Emitter Thr Voltage-Max	8V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant