NGTD17T65F2WP Description

NGTD17T65F2WP is a 650V insulated gate bipolar transistor(IGBT). This Insulated Gate Bipolar Transistor (IGBT) NGTD17T65F2WP  features a robust and cost-effective Field Stop II Trench construction and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The Operating and Storage Temperature Range is between -55 and 175℃. 

NGTD17T65F2WP Features

Extremely Efficient Trench with Field Stop Technology

Low VCE(sat) Loss Reduces System Power Dissipation

TJmax = 175°C

Optimized for High-Speed Switching

5 μs Short Circuit Capability

Pb?Free Devices

NGTD17T65F2WP Applications

Industrial Motor Drives

Solar Inverters

UPS Systems

Welding