APT40GR120B2D30

new-10%

Manufacturer part number:APT40GR120B2D30

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(3+Tab) T-MAX

Case Package:SOT-23

Datasheet:APT40GR120B2D30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	500W
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	22 ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	163 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	88A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.5V
Test Condition	600V, 40A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 40A
Continuous Collector Current	88A
IGBT Type	NPT
Gate Charge	210nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	22ns/163ns
Switching Energy	1.38mJ (on), 906μJ (off)
Gate-Emitter Thr Voltage-Max	6V
Height	5.31mm
Length	21.46mm
Width	16.26mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free