APTGT75DDA60T3G

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Manufacturer part number:APTGT75DDA60T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 100A 32-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGT75DDA60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	250W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Dual Boost Chopper
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	100A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	4.62nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 75A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	4.62nF @ 25V
RoHS Status	RoHS Compliant