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APTGT100DU120TG

APTGT100DU120TG

APTGT100DU120TG

Microsemi Corporation

Trans IGBT Module N-CH 1.2KV 140A 20-Pin Case SP-4

SOT-23

APTGT100DU120TG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 20
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X12
Qualification Status Not Qualified
Number of Elements 2
Configuration Dual, Common Source
Element Configuration Dual
Case Connection ISOLATED
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 140A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.2nF
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 7.2nF @ 25V
VCEsat-Max 2.1 V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $65.34530 $6534.53

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