MMIX1F520N075T2

new-10%

Manufacturer part number:MMIX1F520N075T2

Manufacturer:IXYS

Description:Trans MOSFET N-CH Si 75V 500A 21-Pin

Case Package:SOT-23

Datasheet:MMIX1F520N075T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Number of Pins	21
Transistor Element Material	SILICON
Manufacturer Package Identifier	MMIX1F520N075T2
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	GigaMOS™, TrenchT2™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	21
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	830W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830W
Case Connection	ISOLATED
Turn On Delay Time	48 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	41000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	500A Tc
Gate Charge (Qg) (Max) @ Vgs	545nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	500A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Avalanche Energy Rating (Eas)	3000 mJ
Max Junction Temperature (Tj)	175°C
Height	5.7mm
Length	25.25mm
Width	23.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free