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STWA70N65DM6

  • STWA70N65DM6
  • STWA70N65DM6

STWA70N65DM6

STWA70N65DM6

STMicroelectronics

MOSFET (Metal Oxide) N-Channel 40m Ω @ 34A, 10V ±25V 4900pF @ 100V 125nC @ 10V 650V TO-247-3

SOT-23

STWA70N65DM6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Series MDmesh™ DM6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 450W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 100V
Current - Continuous Drain (Id) @ 25°C 68A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.37000 $14.37
500 $14.2263 $7113.15
1000 $14.0826 $14082.6
1500 $13.9389 $20908.35
2000 $13.7952 $27590.4
2500 $13.6515 $34128.75
STWA70N65DM6 Product Details

STWA70N65DM6 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4900pF @ 100V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

STWA70N65DM6 Features


a 650V drain to source voltage (Vdss)


STWA70N65DM6 Applications


There are a lot of STMicroelectronics
STWA70N65DM6 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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