MMIX1T550N055T2

new-10%

Manufacturer part number:MMIX1T550N055T2

Manufacturer:IXYS

Description:MOSFET N-CH 55V 550A SMPD

Case Package:SOT-23

Datasheet:MMIX1T550N055T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Number of Pins	24
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	FRFET®, SupreMOS®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	21
JESD-30 Code	R-PDSO-G21
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	830W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	550A Tc
Gate Charge (Qg) (Max) @ Vgs	595nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	550A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0013Ohm
Pulsed Drain Current-Max (IDM)	2000A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	3000 mJ
Height	5.7mm
Length	25.25mm
Width	23.25mm
RoHS Status	ROHS3 Compliant