APTGL475DA120D3G

new-10%

Manufacturer part number:APTGL475DA120D3G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 610A 2080W D3

Case Package:SOT-23

Datasheet:APTGL475DA120D3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	D-3 Module
Number of Pins	11
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	2.08kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	11
JESD-30 Code	R-XUFM-X5
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	2080W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	610A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	24.6nF
Turn On Time	270 ns
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 400A
Turn Off Time-Nom (toff)	580 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	24.6nF @ 25V
RoHS Status	RoHS Compliant