VMO1200-01F Description

The VMO1200-01F is a MOSFET N-CH 100V 1220A Y3-LI, N-Channel Enhancement Mode. The most typical method for creating the type of field-effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by carefully controlling the oxidation of silicon. The conductivity of the device is controlled by the voltage of an insulated gate. Electronic signals can be amplified or switched using this property of conductivity that changes with the amount of applied voltage. A MOSFET is generally always referred to as a metal-insulator-semiconductor field-effect transistor (MISFET). An insulated-gate field-effect transistor (IGFET) is another alternative term.

VMO1200-01F Features

• Package

- low inductive current path

- screw connection to high current main terminals

- use of non interchangeable connectors for auxiliary terminals possible

- Kelvin source terminals for easy drive

- isolated DCB ceramic base plate

• PolarHT™ MOSFET technology

 - low RDSon

 - dv/dt ruggedness

 - fast intrinsic reverse diode

• VDSS = 100V

• ID25 = 1220A

• RDS(on) = 1.25mΩ max

VMO1200-01F Applications

• Converters with high power density for

- main and auxiliary AC drives of electric vehicles

- DC drives

- power supplies