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2N7000-AP

2N7000-AP

2N7000-AP

Micro Commercial Co

MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 500mA, 10V ±20V 60pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

SOT-23

2N7000-AP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature -55°C~150°C
Packaging Tape & Box (TB)
Published 2002
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 625mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
2N7000-AP Product Details

2N7000-AP Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 60pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

2N7000-AP Features


a 60V drain to source voltage (Vdss)


2N7000-AP Applications


There are a lot of Micro Commercial Co
2N7000-AP applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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