IRLL024NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLL024NPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
65m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
510pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.1A Ta
Gate Charge (Qg) (Max) @ Vgs
15.6nC @ 5V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
RoHS Status
ROHS3 Compliant
IRLL024NPBF Product Details
IRLL024NPBF Description
Fifth Generation HEXFETs achieve extraordinarily low on-resistance per silicon area by utilizing cutting-edge fabrication processes. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for.
The SOT-223 package is made to be surface-mounted utilizing infrared, vapor phase, or wave soldering processes. As with other SOT or SOIC packages, its distinctive package shape enables simple automatic pick-and-place, but it also has the extra benefit of increased thermal efficiency thanks to an expanded tab for heat sinking. One Watt of power can be lost in a typical surface mount application.