NTD60N02R datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTD60N02R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
HTS Code
8541.29.00.95
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Current Rating
62A
Pin Count
3
Power Dissipation-Max
1.25W Ta 58W Tc
Element Configuration
Single
Power Dissipation
1.87W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C
8.5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
32A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
NTD60N02R Product Details
NTD60N02R Description
NTD60N02R is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 25V. The operating temperature of the NTD60N02R is -55°C~175°C TJ and its maximum power dissipation is 1.87W. NTD60N02R has 3 pins and it is available in Tube packaging way. The Continuous Drain Current (ID) of the NTD60N02R is 32A.
NTD60N02R Features
Planar HD3e Process for Fast Switching Performance